new product VS-3EMU06-M3 www.vishay.com vishay semiconductors revision: 11-apr-13 1 document number: 93993 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 3 a fred pt ? features ? ultrafast recovery time, reduced q rr and soft recovery ? 175 c maximum operating junction temperature ? for pfc crm/ccm, snubber operation ? low forward voltage drop ? low leakage current ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description/applications state of the art ultrafast recovery rectifiers designed with optimized performance of forw ard voltage drop, ultrafast recovery time, and soft recovery. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. note (1) mounted on pcb with minimum pad size product summary package sma (do-214ac) i f(av) 3 a v r 600 v v f at i f 1.35 v t rr typ. 41 ns t j max. 175 c diode variation single die cathode anode s ma (do-214ac) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t l = 103 c (1) 3 non-repetitive peak surge current per leg i fsm t j = 25 c 55 a operating junction and storage temperatures t j , t stg - 55 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 3 a - 1.15 1.35 i f = 3 a, t j = 150 c - 0.99 1.2 reverse leakage current i r v r = v r rated - - 3 a t j = 150 c, v r = v r rated - - 100 junction capacitance c t v r = 600 v - 3.9 - pf
new product VS-3EMU06-M3 www.vishay.com vishay semiconductors revision: 11-apr-13 2 document number: 93993 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounted on pcb with minimum pad size fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test co nditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 41 - ns i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 52 - i f = 0.5 a, i r = 1 a, i rr = 0.25 a - - 65 t j = 25 c i f = 3 a ? di f /dt = 200 a/s ? v r = 390 v -38- t j = 125 c - 52 - peak recovery current i rrm t j = 25 c - 5.6 - a t j = 125 c - 7.3 - reverse recovery charge q rr t j = 25 c - 108 - nc t j = 125 c - 193 - thermal - mechanical specifications parameter symbol test cond itions min. typ. max. units maximum junction and storage temperature range t j , t stg - 55 - 175 c thermal resistance, ? junction to case r thjc (1) --20 c/w thermal resistance, ? junction to ambient r thja (1) --95 approximate weight 0.07 g 0.002 oz. marking device case style sma (do-214ac) 3u6 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 t j = 25 c t j = 150 c t j = 175 c v r - reverse voltage (v) i r - reverse current (a) 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 100 150 c 175 c 25 c 125 c
new product VS-3EMU06-M3 www.vishay.com vishay semiconductors revision: 11-apr-13 3 document number: 93993 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum allowable case temperature vs. average forward current fig. 5 - forward power loss characteristics fig. 6 - typical reverse recovery time vs. di f /dt fig. 7 - typical stored charge vs. di f /dt c t - junction capacitance (pf) v r - reverse voltage (v) 0 100 200 400 500 300 600 1 100 10 allowable case temperature (c) i f(av) - average forward current (a) 012345 60 40 80 100 120 140 160 180 200 dc average power loss (w) i f(av) - average forward current (a) 0 1 2 3 4 5 0 1 2 3 4 5 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 dc rm s limit t rr (ns) di f /dt (a/s) 0 100 1000 10 20 30 40 50 60 70 80 i f = 3 a, 125 c i f = 3 a, 25 c typical value q rr (nc) di f /dt (a/s) 100 1000 typical value 0 50 100 150 200 250 300 350 i f = 3 a, 25 c i f = 3 a, 125 c
new product VS-3EMU06-M3 www.vishay.com vishay semiconductors revision: 11-apr-13 4 document number: 93993 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - reverse recovery waveform and definitions ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description VS-3EMU06-M3/5at 5at 7500 13"diameter plastic tape and reel links to related documents dimensions www.vishay.com/doc?95400 part marking information www.vishay.com/doc?95472 packaging information www.vishay.com/doc?95404 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 2 - current rating (3 = 3 a) 3 - circuit configuration: 4 - m = sma package 5 - process type, u = ultrafast recovery 6 - voltage code (06 = 600 v) - m3 = halogen-free, rohs compliant, and terminations lead (pb)-free 7 device code 5 1 3 2 4 6 7 vs- 3 e m u 06 -m3 1 - vishay semiconductors product e = single diode
document number: 95400 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 sma outline dimensions vishay semiconductors dimensions in inches (millimeters) do-214ac ( s ma) mounting pad layout 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) 0.030 (0.76) 0.060 (1.52) 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min.
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